Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Patent
1997-08-11
1999-12-07
Bowers, Charles
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
438680, 438471, 438778, 438788, 438DIG928, 257DIG913, 148DIG24, 148DIG60, H01L 21322, H01L 2144
Patent
active
059982837
ABSTRACT:
In a silicon wafer having a CVD film formed on one main face and having the other main face mirror-polished, the components and/or composition of the CVD film change in the thicknesswise direction of the film. This makes it possible to provide a silicon wafer having a thin film provided on the back surface, which thin film has excellent and persistent gettering capability that can remove a greater variety of types of elements and can prevent autodoping.
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Kobayashi Norihiro
Takamizawa Shoichi
Bowers Charles
Lee Sam
Shin-Etsu Handotai & Co., Ltd.
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