Silicon wafer having good intrinsic getterability and method...

Details Silicon wafer having good intrinsic getterability and method... Silicon wafer having good intrinsic getterability and method...

2011-06-21

2011-06-21

Speer, Timothy M (Department: 1784)

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Physical dimension specified

C117S003000, C117S013000, C423S348000

Reexamination Certificate

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07964275

ABSTRACT:
Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius, crystal lattice vacancy agglomerates of at least 30 nm in a density ≦6·103cm−3, crystal lattice vacancy agglomerates of from 10 nm to 30 nm in a density of 1·105cm−3to 3·107cm−3, OSF seeds in a density of 0 to 10 cm−2, and an average bulk BMD density of 5·108cm−3to 5·109cm−3, which varies at most by a factor of 10 radially over the entire silicon wafer, and a BMD-free layer on the front side, wherein the first BMD is found at a depth of at least 5 μm and on average at a depth of at least 8 μm.

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