Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2005-04-12
2005-04-12
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S462000
Reexamination Certificate
active
06878609
ABSTRACT:
In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.
REFERENCES:
patent: 6174789 (2001-01-01), Tsukada
patent: 6521513 (2003-02-01), Lebens et al.
Akachi Hisashi
Akasu Tetsuya
Miyata Yoshinao
Okazawa Noriaki
Shinbo Toshinao
Seiko Epson Corporation
Sughrue & Mion, PLLC
Tsai H. Jey
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