Silicon wafer break pattern, silicon substrate, and method...

Semiconductor device manufacturing: process – Semiconductor substrate dicing

Reexamination Certificate

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C438S462000

Reexamination Certificate

active

06878609

ABSTRACT:
In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

REFERENCES:
patent: 6174789 (2001-01-01), Tsukada
patent: 6521513 (2003-02-01), Lebens et al.

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