Silicon wafer, and method of manufacturing the same

Details Silicon wafer, and method of manufacturing the same Silicon wafer, and method of manufacturing the same

1997-03-24

1999-01-26

Thibodeau, Paul J.

Stock material or miscellaneous articles

Composite

Of silicon containing

257627, 257628, 428620, 428641, 438457, 438471, 438476, B32B 904, H01L 21322

Patent

active

058636595

ABSTRACT:
A silicon wafer has a polycrystalline silicon film formed on one main surface. The polycrystalline silicon film has a multilayer structure composed of X layers (X is an integer equal to or greater than two) containing <220> oriented components in different proportions. The proportion of the <220> oriented component in the first polycrystalline silicon layer in contact with the silicon wafer is larger than the respective proportions of the <220> oriented components in the second to X-th polycrystalline silicon layers superposed on the first polycrystalline silicon layer. It becomes possible to provide a silicon wafer whose polycrystalline silicon film possesses high gettering capability and in which stress acting on the silicon wafer is decreased.

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patent: 5374842 (1994-12-01), Kusakabe
patent: 5419786 (1995-05-01), Kokawa et al.
patent: 5449532 (1995-09-01), Toyokawa
Patent Abstracts of Japan, vol. 095, No. 004, 31 May 1995.
Patent Abstracts of Japan vol. 017, No. 178 (E-1347), 7 Apr. 1993.
Patent Abstracts of Japan, vol. 014, No. 012 (E-871) 11 Jan. 1989.
"Continuous Gettering of Contaminants Using Multiple Polysilicon Films", IBM Technical Disclosure Bulletin, vol. 33, No. 11, 1 Apr. 1991, pp. 400-401.

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