Silicon wafer and method for manufacturing the same

Details Silicon wafer and method for manufacturing the same Silicon wafer and method for manufacturing the same

2007-01-09

2007-01-09

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C117S004000, C117S935000

Reexamination Certificate

active

10368359

ABSTRACT:
A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and the carbon concentration are controlled respectively within a range of 11×1017–17×1017atoms/cm3(OLD ASTM) and within a range of 1×1016–15×1016atoms/cm3(NEW ASTM). A denuded zone having no crystal defects due to the existence of oxygen is formed on the surface and in the vicinity thereof, and oxygen precipitates are formed at a density of 1×104–5×106counts/cm2, when a heat treatment is carried out at a temperature of 500–1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C.–1380° C. for 1 to 10 hours. The control of the oxygen and carbon concentrations in the growth of a single crystal with CZ method allows a desired density of oxygen precipitates to be attained in the process of manufacturing devices and thereby sufficient gettering efficiency to be obtained.

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