Silicon wafer

Details Silicon wafer Silicon wafer

2005-06-14

2005-06-14

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S064100, C117S002000, C117S931000, C117S932000, C423S348000

Reexamination Certificate

active

06905771

ABSTRACT:
A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: −0.8×10−3≦4.64×10−24×[Ge]−2.69×10−23×[B]≦1.5×10−3. This can reduce the miss-fit dislocation which might be induced when an epitaxial layer is grown over the silicon wafer that has been added with boron in high concentration. It is to be noted that in the above relational expression, the [B] denotes a boron concentration, while the [Ge] denotes a germanium concentration and a concentration unit is indicated by atoms/cm3.

REFERENCES:
patent: 4631234 (1986-12-01), Larrabee
patent: 4769689 (1988-09-01), Lin
patent: 5659192 (1997-08-01), Sarma et al.
patent: 6172399 (2001-01-01), Lee et al.
patent: 2003209059 (2003-07-01), None

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