Silicon trench etch

Details Silicon trench etch Silicon trench etch

1985-04-03

1989-08-15

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 20419237, H01L 21306

Patent

active

048571385

ABSTRACT:
An improved method is disclosed for obtaining relatively deep (6 microns) trenches in single crystal silicon wafers. The method comprises exposing the wafer to a plasma formed in a gas mixture comprising Freon 11 (CCl.sub.3 F), sulphur hexafluoride (SF.sub.6) and either helium or argon. The etch takes place at a pressure of 1-3 torr (133-400 Pa) in a narrow gap (6 mm.) planar plasma reactor.

REFERENCES:
patent: 4353777 (1982-10-01), Jacob
patent: 4380489 (1983-04-01), Beivogl et al.
"Anisotropic Plasma Etching of Polysilicon Using SFL and CFCl.sub.3 ", Mieth et al., 1983 Plasma Seminar Proceedings, pp. 25-29.
"Parameteric Modeling of Plasma Etching Processes", Sawin et al., 1985, Plasma Seminar Proceedings, pp. 17-24.

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