Silicon transducer with composite beam

Details Silicon transducer with composite beam Silicon transducer with composite beam

1996-01-18

1997-10-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257417, 257418, 257419, 257522, 257619, 257930, 7351421, 7351422, 7351436, 73DIG1, H01L 2982

Patent

active

056820534

ABSTRACT:
A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.

REFERENCES:
patent: 5245504 (1993-09-01), Bullis et al.
patent: 5324683 (1994-06-01), Firh et al.

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