Silicon substrate having porous oxidized silicon layers and its

Details Silicon substrate having porous oxidized silicon layers and its Silicon substrate having porous oxidized silicon layers and its

1990-07-24

1992-10-20

Thibodeau, Paul J.

Stock material or miscellaneous articles

Perimeter or corner structure of sheet

156648, 156653, 156657, 156662, 219216, 346 76PH, 427255, 427275, 427309, 4273977, 428192, 428195, 4283184, 4283186, 428446, 428458, 428469, 437 69, B32B 302, B32B 520

Patent

active

051568969

ABSTRACT:
In the silicon substrate having porous oxidized silicon layers of this invention, which consists of a silicon substrate the one surface of which is dotted with porous oxidized silicon dots, the residual internal stress (compression stress) is dispersedly distributed in the porous oxidized silicon dots. Therefore, the entire silicon substrate having porous oxidized silicon dots of this invention is only minimally warped.
Adopting a method for producing the silicon substrate of this invention which consists of covering with a mask the surface of a silicon substrate except its dotting areas to be treated, subjecting the silicon substrate to anodic formation in an aqueous hydrofluoric acid solution to form porous silicon layers in the areas to be treated and not covered with the mask and then oxidizing the formed porous silicon layers enables secured production of a silicon substrate provided with a plurality of polygonal shaped dots of porous oxidized silicon.

REFERENCES:
patent: 4738896 (1988-04-01), Stevens
patent: 4777583 (1988-10-01), Minami et al.
patent: 4911783 (1990-03-01), Voboril

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