Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-08-01
2006-08-01
Eckert, George (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000, C556S413000, C556S466000
Reexamination Certificate
active
07084080
ABSTRACT:
A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.
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Baum Thomas H.
Benac Brian L.
Borovik Alexander S.
Wang Ziyun
Xu Chongying
Advanced Technology & Materials Inc.
Boyd John
Chappuis Maggie
Eckert George
Fuierer Tristan A.
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