Silicon single crystal wafer for particle monitor

Details Silicon single crystal wafer for particle monitor Silicon single crystal wafer for particle monitor

2008-05-23

2010-11-23

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S002000, C117S014000, C117S020000, C117S019000

Reexamination Certificate

active

07837791

ABSTRACT:
A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm2after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×10131×1015atoms/cm3provides a surface density of not more than 1 counts/cm2for the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

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