Silicon single crystal producing method, annealed wafer, and...

Details Silicon single crystal producing method, annealed wafer, and... Silicon single crystal producing method, annealed wafer, and...

2011-01-25

2011-01-25

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S017000, C117S018000, C117S020000, C117S008000

Reexamination Certificate

active

07875116

ABSTRACT:
A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal6before annealing. Alternatively, SSD is reduced by polishing after annealing.

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German Office Action for related patent application issued Dec. 22, 2009 with English translation.

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