Silicon-silicon-germanium heterojunction bipolar transistor fabr

Details Silicon-silicon-germanium heterojunction bipolar transistor fabr Silicon-silicon-germanium heterojunction bipolar transistor fabr

1996-08-23

1997-09-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

H01L 21265

Patent

active

056680228

ABSTRACT:
A silicon/silicon-germanium bipolar transistor fabrication method employs a metallic silicide film as an extrinsic base electrode to reduce resistance of the extrinsic base electrode, and to increase a maximum oscillation frequency and cut-off frequency due to its self-aligned structure. The fabrication method enables agglomeration to occur on the side wall of the polycrystalline silicon film connected to the metallic silicide film instead of on the interface between the metallic silicide film and the lower silicon/silicon-germanium film, and leads the extrinsic base electrode to be sandwitched by the insulator films, thereby realizing a constant resistance and also resulting in the application of integrated circuits to a mass production mechanism.

REFERENCES:
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patent: 5484737 (1996-01-01), Ryun et al.
patent: 5496745 (1996-03-01), Ryun et al.
patent: 5523243 (1996-06-01), Mohammad
Sato et al., "A `Self-Aligned` Selective MBE Technology For High-Performance Bipolar Transistors", IEEE 1990, pp.25.7.1-25.7.4.
Ugajin et al., "SiGe Drift Base Bipolar Technology Using Si-GeH.sub.4 MBE for Sub-40 GHz f.sub.MAX Operation", IEEE 1992, pp. 26-29.
Ugajin et al., "SiGe Drift Base Bipolar Transistor with Self-Aligned Selective CVD-Tungsten Electrodes", IEEE Mar. 1994.

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