Silicon/silicon carbide composite and process for...

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Reexamination Certificate

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C428S408000, C428S446000, C428S620000

Reexamination Certificate

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06841273

ABSTRACT:
The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction. The present invention uses a silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % silicon carbide, said silicon carbide being formed from an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm. The present invention is directed to a process for manufacturing a silicon/silicon carbide composite which comprises a first step where cellulose fibers with a fiber thickness of 150 μm or less is heated at a temperature of 500° C. to 1500° C. in a non-oxidizing atmosphere to produce a porous carbon body with a bulk density of 0.10 to 0.80 g/cm3and a second step where said porous carbon body is silicification in an atmosphere containing silicon.

REFERENCES:
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patent: 6258737 (2001-07-01), Steibel et al.
patent: 6576076 (2003-06-01), Tani
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patent: 2-56307 (1990-11-01), None
Patent Abstracts of Japan, vol. 1999, No. 11, Sep. 30, 1999, JP 11-147779, Jun. 2, 1999.
D. Shin et al., “Silicon/Silicon Carbide Composites Fabricated by Infiltration of a Silicon Melt into Charcoal”, Journal of the American Ceramic Society, American Ceramic Society, vol. 82, No. 11, Nov. 1999, pp. 3251-3253.

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