Silicon sidewall etching

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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438733, 438735, H01L 2100

Patent

active

058952730

ABSTRACT:
Decoupled plasma etching process used to make a protruding structure having vertical or near vertical sidewalls. The decoupled plasma etching process comprises the following steps:

REFERENCES:
patent: 4450042 (1984-05-01), Purdes
patent: 4521275 (1985-06-01), Purdes
patent: 4702795 (1987-10-01), Douglas
patent: 4799991 (1989-01-01), Dockrey
patent: 5078833 (1992-01-01), Kadomura
patent: 5118383 (1992-06-01), Engelhardt
patent: 5242536 (1993-09-01), Schoenborn
patent: 5262002 (1993-11-01), Grewal et al.
patent: 5271799 (1993-12-01), Langley
patent: 5409563 (1995-04-01), Cathey
patent: 5423941 (1995-06-01), Komura et al.
patent: 5665203 (1997-09-01), Lee et al.
R.F. Dreves, J.J. Lajza, Jr. and H. Trumpp, :Trench-Forming Process, IBM Technical Dislosure Bulletin, vol. 27, No. 1B, Jun. 1984, pp. 599-600.
S.W. Swan et al., "Microtrenching during polysilicon plasma etch", SPIE, vol. 1803, Apr. 1993, pp. 2-12.
N. Fujiwara et al., "Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma", Jap. J. Appl. Phys, vol. 34, Apr. 1995, pp. 2095-2100, Part 1, No. 4B.
H.I. Hanafi et al., "A Scalable Low Power Vertical Memory" IEDM, Dec. 10-13, 1995, pp. 657-660.

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