Silicon shadow mask

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

118721, 118504, 156645, 156657, 1566591, 156662, 156633, 20429811, 428134, 428137, H01L 2306, B44C 122, C03C 1500, C03C 2506

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051547970

ABSTRACT:
A shadow mask for sputtering is formed from a single crystal silicon wafer which is mechanically and chemically polished to produce top and bottom surfaces which are substantially flat and parallel to one another. The wafer is provided with one or more pyramidal etch pits which are arranged in a pattern. Each pit has a substantially square cross-section on the top surface, and a smaller substantially square cross-section on the bottom surface to produce an aperture in the wafer. In use, the wafer is clamped against a flat substrate with its apertures opening toward the evaporant beam. After use, the deposited species may be cleaned from the wafer using suitable etchants which render the wafer unharmed, and therefore reusable.

REFERENCES:
patent: 3713922 (1973-01-01), Lepselter et al.
patent: 3770533 (1973-11-01), Zwicker
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4391034 (1983-07-01), Stuby
patent: 4401367 (1983-08-01), Grantham et al.
patent: 4419182 (1983-12-01), Westerberg
patent: 4919749 (1990-04-01), Mauger et al.
patent: 4941942 (1990-07-01), Bruns et al.
Bassous, "Fabrication of Novel Three-Dimensional Microstructures by the Aotropic Etching of (100) and (110) Silicon," IEEE Transactions on Electron Devices, vol. ED-25, No. 10, Oct. 1978 pp. 1178-1185.

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