Silicon semiconductor substrate and preparation thereof

Details Silicon semiconductor substrate and preparation thereof Silicon semiconductor substrate and preparation thereof

2007-04-24

2007-04-24

Gupta, Yogendra (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S002000, C117S013000, C117S019000, C428S641000

Reexamination Certificate

active

10236273

ABSTRACT:
A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method and characterized by satisfying the relational expression (Oi DZ)−(COP DZ)≦10 μm wherein Oi DZ denotes a defect-free zone of oxygen precipitate crystal defects and COP DZ denotes a region devoid of a void type defect measuring not less than 0.11 μm in size, and having not less than 5×108oxygen precipitate crystal defects per cm3. The method for making the substrate comprises the steps of deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method using molten silicon containing not less than 5×1017atoms and not more than 1.5×1019atoms of nitrogen per cm3and heat-treating the silicon semiconductor substrate in a non-oxidizing atmosphere at a highest final temperature of not lower than 1150° C. for not less than one hour.

REFERENCES:
patent: 5438951 (1995-08-01), Tachikawa et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5683504 (1997-11-01), Izunome et al.
patent: 5700320 (1997-12-01), Izunome et al.
patent: 5704974 (1998-01-01), Izunome et al.
patent: 5833749 (1998-11-01), Moritani et al.
patent: 5919302 (1999-07-01), Falster et al.
patent: 5935320 (1999-08-01), Graef et al.
patent: 6080237 (2000-06-01), Iwasaki et al.
patent: 6191009 (2001-02-01), Tamatsuka et al.
patent: 6228164 (2001-05-01), Ammon et al.
patent: 6254672 (2001-07-01), Falster et al.
patent: 6284039 (2001-09-01), Mule'Stagno et al.
patent: 6395653 (2002-05-01), Obermeier et al.
patent: 6485807 (2002-11-01), Park
patent: 6492682 (2002-12-01), Akiyama et al.
patent: 6548035 (2003-04-01), Kimura et al.
patent: 6548886 (2003-04-01), Ikari et al.
patent: 6599603 (2003-07-01), Kato et al.
patent: 6617034 (2003-09-01), Hamaguchi et al.
patent: 6767848 (2004-07-01), Tachikawa et al.
patent: 6805742 (2004-10-01), Tachikawa et al.
patent: 4323964 (1994-01-01), None
patent: 0 829 559 (1998-03-01), None
patent: 0 909 840 (1999-04-01), None
patent: 0 942 078 (1999-09-01), None
patent: 0 962 557 (1999-12-01), None
patent: 1 035 235 (2000-09-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Processing Technology, Lattice Press, Sunset Beach, CA, USA, pp. 1-72, 1986.
Patent Abstract of Japan corresponding to JP 06-252154.
Patent Abstract of Japan corresponding to JP 2000-211995.
Patent of Abstract of Japan corresponding to JP 06-252154.

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