Silicon-rich nickel-silicide ohmic contacts for SiC...

Details Silicon-rich nickel-silicide ohmic contacts for SiC... Silicon-rich nickel-silicide ohmic contacts for SiC...

2011-01-25

2011-01-25

Ho, Hoang-Quan T (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000, C438S660000, C438S666000, C438S680000, C438S682000, C438S931000, C257S077000, C257S744000, C257S754000, C257S766000, C257S773000, C257SE21062, C257SE29146

Reexamination Certificate

active

07875545

ABSTRACT:
A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

REFERENCES:
patent: 5323022 (1994-06-01), Glass et al.
patent: 5409859 (1995-04-01), Glass et al.
patent: 5442200 (1995-08-01), Tischler
patent: 5502003 (1996-03-01), Ogino et al.
patent: 5980265 (1999-11-01), Tischler
patent: 6388272 (2002-05-01), Odekirk
patent: 6599644 (2003-07-01), Zekentes et al.
patent: 6759683 (2004-07-01), Cole et al.
patent: 6815323 (2004-11-01), Lu et al.
patent: 2004/0144301 (2004-07-01), Neudeck et al.
patent: 2005/0245034 (2005-11-01), Fukuda et al.
patent: 2006/0007727 (2006-01-01), Harrison et al.
patent: 2322595 (2002-04-01), None
patent: 07-099169 (1995-04-01), None
patent: 07099169 (1995-04-01), None
patent: 0184609 (2001-11-01), None
Crofton et al. The Physics of Ohmic Contacts to SiC. 1997. Phys. Stat. Sol. (b) 202, pp. 581-603.
Rastegaeva et al. The influence of temperature treatment on the formation of Ni-based Schottky diodeds and ohmic contacts to n-6H-SiC. 1997. Materials Science and Engineering B46. pp. 254-258.
Kuimoto et al. Raman study on the Ni/SiC interface reaction. Jun. 15, 2002. Journal of Applied Physics. vol. 91, No. 12. pp. 10215-10217.
Nakamura, et al. “NiSi2 Ohmic Contact to n-Type 4H-Sic,” Materials Science Forum, vol. 389-393, 2002, pp. 889-892, Switzerland.
Nakasuka, et al, “Improvement in morphology of nickel silicide film with carbon,” Junction Technology, 2002, IWJT, Extended Abstracts of the Third International Workshop Dec. 2-3, 2002, pp. 71-72.
Deeb, et al, “A low temperature route to thermodynamically stable ohmic contacts to n-type 6H-Sic,” Applied Phyics Letters, American Institute of Physics, vol. 84, No. 7, Feb. 16, 2004, pp. 1117-1119.
Cole, et al., Enhanced Performance and Reliability of SiC High Power Switch Components: An Enableing (sic) Technology for Electric Weapons and Propulsion Systems; 23rd Army Science Conference: Dec. 2-5, 2002: 8 pages.
Du, et al.; Experimental Investigations and Thermodynamic Descriptions of the Ni-Si and C-Ni-Si Systems ; Metallurgical and Materials Transactions A; Sep. 1999; pp. 2409-2418; vol. 30A.
Bachli, et al.; Nickel Film on (001) SiC: Thermally Induced Reactions; Materials Science and Engineering B56 (1998) pp. 11-23.
Zetterline (editor); Process Technology for Silicon Carbide Devices (EMIS processing series; No. 2); 2002, pp. 134-135; INSPEC, The Institution of Electrical Engineers, London.
Non-Final Rejection mailed Apr. 7, 2001.
Final Rejection mailed Nov. 2, 1006.
Final Rejection mailed Apr. 13, 2007.
Examiner's Answer mailed May 14, 2008.
Board of Patent Appeals and Interferences mailed Jun. 19, 2009.

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