Silicon-rich block copolymers to achieve unbalanced vias

Details Silicon-rich block copolymers to achieve unbalanced vias Silicon-rich block copolymers to achieve unbalanced vias

1997-07-24

2000-11-07

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438672, 438975, H01L 214763

Patent

active

06143647&

ABSTRACT:
An integrated circuit and method for making it is described. The integrated circuit includes an insulating layer, formed within a trench that separates conductive elements of a conductive layer, that has a low dielectric constant. The insulating layer is convertible at least in part into a layer that is resistant to a plasma that may be used for a photoresist ashing step or to a solvent that may be used for a via clean step. Preferably the insulating layer comprises a silicon containing block copolymer that is convertible at least in part into a silicon dioxide layer. The silicon dioxide layer protects the remainder of the insulating layer from subsequent processing, such as photoresist ashing and via clean steps.

REFERENCES:
patent: 4430153 (1984-02-01), Gleason et al.
patent: 5371047 (1994-12-01), Greco et al.

Affiliated with

Also associated with

Rating

Silicon-rich block copolymers to achieve unbalanced vias does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-rich block copolymers to achieve unbalanced vias, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-rich block copolymers to achieve unbalanced vias will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1640497