Silicon rich barrier layers for integrated circuit devices

Details Silicon rich barrier layers for integrated circuit devices Silicon rich barrier layers for integrated circuit devices

2005-06-07

2005-06-07

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S379000, C257S384000, C257S903000

Reexamination Certificate

active

06903425

ABSTRACT:
Semiconductor devices and memory cells are formed using silicon rich barrier layers to prevent diffusion of dopants from differently doped polysilicon films to overlying conductive layers or to substrates. A polycilicide gate electrode structure may be formed using the silicon rich barrier layers. Methods of forming the semiconductor devices and memory cells are also provided. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

REFERENCES:
patent: 5639687 (1997-06-01), Roman et al.
patent: 5958508 (1999-09-01), Adetutu et al.
patent: 6045954 (2000-04-01), Dai et al.
patent: 6096640 (2000-08-01), Hu
patent: 6245669 (2001-06-01), Fu et al.

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