Silicon production with a fluidized bed reactor utilizing...

Details Silicon production with a fluidized bed reactor utilizing... Silicon production with a fluidized bed reactor utilizing...

2011-04-19

2011-04-19

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S507000, C427S213000, C423S341000, C423S347000

Reexamination Certificate

active

07927984

ABSTRACT:
Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.

REFERENCES:
patent: 5810934 (1998-09-01), Lord et al.
patent: 2008/0056979 (2008-03-01), Arvidson et al.
patent: 2009/0095710 (2009-04-01), Kim et al.
patent: 2010/0124525 (2010-05-01), Li
patent: 2007145474 (2007-12-01), None
JP 57-145021, “Preparation of Silicon Granule”, Shin Etsu Chemical Co. Ltd. Abstract only.

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