Silicon pressure sensor and the manufacturing method thereof

Details Silicon pressure sensor and the manufacturing method thereof Silicon pressure sensor and the manufacturing method thereof

2005-01-04

2005-01-04

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S054000

Reexamination Certificate

active

06838303

ABSTRACT:
The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 1019-1020cm−3in order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 1021cm−3) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are balanced and symmetrized, thus the zero offset caused by the variations in resistance of the bridge can be reduced in order to simplify the signal-processing circuit.

REFERENCES:
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patent: 5170237 (1992-12-01), Tsuda et al.
patent: 5714690 (1998-02-01), Burns et al.
patent: 5812047 (1998-09-01), van Kampen
patent: 5872315 (1999-02-01), Nagase et al.
patent: 6204086 (2001-03-01), Muchow et al.
patent: 6523415 (2003-02-01), Kurtz et al.

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