Silicon-polysilicon infrared image device with orientially etche

Details Silicon-polysilicon infrared image device with orientially etche Silicon-polysilicon infrared image device with orientially etche

1976-07-15

1977-12-13

Miller, Jr., Stanley D.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

250332, 250370, 357 24, 357 60, H01L 2714

Patent

active

040632687

ABSTRACT:
An infrared imaging device is made by SIP chip growth technology to form an array of extrinsic silicon infrared detectors on an insulating layer which is on one side of an infrared-transparent polysilicon layer. A perforated mask is on the opposite side of the polysilicon layer. The detectors each have the shape of a frustum of a right rectangular pyramid. During processing of the chip for detectors, charge coupled devices (CCDs) are also made on the chip. These CCD's are indirectly connected to respective detectors and to readout lines on the chip.

REFERENCES:
patent: 3486892 (1969-12-01), Rosvold
patent: 3883437 (1975-05-01), Nummedal et al.
Gerritsen et al., "An Infrared Image Converter Equipped with an Array of rinsic Silicon Photodetectors," IEEE Transactions on Electron Devices, vol. ED-18, No. 11, Nov. 1971, pp. 1011-1015.

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