Silicon photodiode for monolithic integrated circuits

Details Silicon photodiode for monolithic integrated circuits Silicon photodiode for monolithic integrated circuits

1992-05-11

1993-08-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257458, 257459, 257465, 257461, 257448, H01L 2714

Patent

active

052391930

ABSTRACT:
An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.

REFERENCES:
patent: 4366377 (1982-12-01), Notthoff et al.
patent: 4394676 (1983-07-01), Agouridis
patent: 4904607 (1990-02-01), Riglet
patent: 4956304 (1990-09-01), Cockrum
patent: 4972244 (1990-11-01), Buffet
patent: 5010018 (1991-04-01), Polasko
patent: 5097305 (1992-03-01), Mead et al.
Miura et al., "A Novel Planarization Technique for Optoelectronic Integrated Circuits and Its Application to a Monolithic AlGaAs/GaAs P-i-n FET", IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb. 1987, pp. 241-246.

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