Silicon-ozone CVD with reduced pattern loading using...

Details Silicon-ozone CVD with reduced pattern loading using... Silicon-ozone CVD with reduced pattern loading using...

2011-08-09

2011-08-09

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S786000, C257S296000, C257S774000

Reexamination Certificate

active

07994019

ABSTRACT:
Aspects of the disclosure pertain to methods of depositing conformal silicon oxide layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface having heterogeneous materials and/or a heterogeneous pattern density distribution. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on underlying material and pattern density while still being suitable for non-sacrificial applications. Reduction in dependence on pattern density is achieved by terminating deposition near the end of an incubation period. Multiple deposition cycles may be conducted in series since the beneficial nature of the incubation period may repeat after a pause in deposition.

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