Silicon oxynitride passivated semiconductor body and method of m

Details Silicon oxynitride passivated semiconductor body and method of m Silicon oxynitride passivated semiconductor body and method of m

1986-06-25

1988-01-05

Cannon, James C.

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

148 33, 313619, 357 16, 357 20, 357 58, 357 61, 357 70, 427 39, 4272553, 428620, 428641, 428642, H01L 21316, H01L 21318

Patent

active

047176318

ABSTRACT:
A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction.
Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.

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