Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having semi-insulating component
Reexamination Certificate
2006-03-07
2006-03-07
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having semi-insulating component
C438S406000, C438S423000
Reexamination Certificate
active
07008854
ABSTRACT:
A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor layer, and has a coefficient of thermal expansion substantially equal to that of the semiconductor layer. The semiconductor layer can also be formed having a thickness such that, it does not yield due to temperature-induced strain at device processing temperatures. A silicon layer bonded to a silicon oxycarbide glass substrate provides a silicon on insulator wafer in which circuitry for electronic devices is fabricated.
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Blum David S.
Micro)n Technology, Inc.
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