Silicon oxide thin-films with embedded nanocrystalline silicon

Details Silicon oxide thin-films with embedded nanocrystalline silicon Silicon oxide thin-films with embedded nanocrystalline silicon

2006-05-04

2009-06-09

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S569000, C438S584000, C438S637000, C438S689000, C438S788000, C257SE21252, C257SE21279

Reexamination Certificate

active

07544625

ABSTRACT:
A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.

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patent: 2004/0106285 (2004-06-01), Zacharias
“High efficiency light emission devices in Si”, Castagna et al, Mat. Res. Soc. Symp. Proc., vol. 770, p. 12.1.1 (2003).

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