Silicon oxide thin film etching process

Details Silicon oxide thin film etching process Silicon oxide thin film etching process

1985-07-15

1987-12-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156655, 156657, 1566591, 156667, 20419232, 252 791, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

047116986

ABSTRACT:
A plasma dry etch process for etching semiconductor insulating materials, such as thermally grown or CVD deposited silicon oxide, with selectivity to silicon and refractory metals and their silicides, using a fluorinated inorganic center together with a hydrogen-liberating source under glow discharge conditions. The process does not employ saturated or unsaturated fluorocarbons as etchants, thereby eliminating the polymerization problem.

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patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4544444 (1985-10-01), Chang
Pang et al., "Damage Induced in Siby Ion Milling or Reactive Ion Etching", J. Appl. Phys., 54 (6) Jun. 1983, pp. 3272-3277.
Winters, "The Role of Chemisorption in Plasma Etching", J. Appl. Phys., 49 (10), Oct. 1978, pp. 5165-5170.
Coburn et al., "Ion-Surface Interactions in Plasma Etching", J. Appl. Phys., vol. 48, No. 8, Aug. 1977, pp. 3532-3540.
Heinecke, "Control of Relative Etch Rates of SiO.sub.2 and Si in Plasma Etching", Solid State Electronics, 1975, pp. 1146-1147.
Heinecke, "Plasma Etching of Films at High Rates", Solid State Technology, Apr. 1978, pp. 104-106.
Whitcomb, "Selective, Anisotropic Etching of SiO.sub.2 and PSG in CHF.sub.3 /SF.sub.6, RIE Plasma", Conference; Electrochemical Society Incorporated, Spring Meeting, 5/9-14/1982, pp. 339-340.

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