Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-01-05
1999-11-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, 257350, 257354, H01L 2701, H01L 2712, H01L 310392
Patent
active
059947381
ABSTRACT:
A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants. SOI bipolar transistors, pinch resistors, and diodes, all incorporating transition regions, are also disclosed.
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Article: Suppression of the SOI Floating-body Effects by Linked-body Device Structure. pp. 92-93. Chen et al. Symposium on VLSI Technology Digest of Technical Papers. IEEE 1996.
Article: Ben G. Streetman, Solid State Elelctronic Devices, p. 190, 1980.
Advanced Micro Devices
Ngo Ngan V.
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