Silicon oxide insulator (SOI) semiconductor having selectively l

Details Silicon oxide insulator (SOI) semiconductor having selectively l Silicon oxide insulator (SOI) semiconductor having selectively l

1997-12-16

2000-02-01

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

257347, H01L 21265

Patent

active

06020222&

ABSTRACT:
A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants. SOI bipolar transistors, pinch resistors, and diodes, all incorporating transition regions, are also disclosed.

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Shahidi, G.: "SOI: Opportunities and Challenges for Sub-0.25 .mu.m VLSI" IEEE 1992 Bipolar Circuts and Technology Meeting 13.1 IBM Research division, T. J. Watson Research Center. Yorktown Heights, N. Y., 10598, U.S.A.
Koh, Yo-Hwan et al.: "Body-Contacted SOI MOSFET Structure with Full Bulk CMOS Compatible Layout and Process" IEEE Electron Device Letters, vol. 18., No. 3, Mar. 1997.
Article: Suppression of the SOI Floating-body Effects by Linked-body Device Structure. pp. 92-93. Chen et al. Symposium on VLSI Technology Digest of Technical Papers. IEEE 1996.

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