Silicon oxide film formation method

Details Silicon oxide film formation method Silicon oxide film formation method

2005-10-18

2005-10-18

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S255370

Reexamination Certificate

active

06955836

ABSTRACT:
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2gas, NO gas, N2O gas, NO2gas or the like) is added to oxygen atom containing gas (O2gas, O3gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.

REFERENCES:
patent: 5904573 (1999-05-01), Jang et al.
patent: 2000345349 (2000-12-01), None

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