Silicon oxide film evaluation method

Details Silicon oxide film evaluation method Silicon oxide film evaluation method

1994-03-29

1997-01-21

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

2503414, H01L 2166

Patent

active

055959164

ABSTRACT:
In a silicon oxide film evaluation method for evaluating the silicon oxide film formed on a silicon substrate, radiation of a plurality of incident angles is irradiated to the silicon oxide film, reflected radiation of the radiation of the plural incident angles on the silicon oxide film is measured, reflectances for the radiation of the plural incident angles is computed, based on the radiation of the plural incident angles and reflected radiation thereof, a dielectric function is computed, based on the reflectances for the plural incident angles, and film quality of the silicon oxide film is evaluated, based on the dielectric function. The silicon oxide film evaluation method and apparatus can evaluate film quality of the silicon oxide film formed on the silicon substrate in non-contact and non-destructively.

REFERENCES:
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 4590574 (1986-05-01), Edmonds et al.
patent: 4862000 (1989-08-01), Kubota et al.
patent: 5066599 (1991-11-01), Kaneta et al.
patent: 5107119 (1992-04-01), Kimura et al.
patent: 5273617 (1993-12-01), Fathauer et al.
B. Garrido et al., Appl. Surf. Sci, 56-58(1992)861 ". . . Si/SiO.sub.2 interfaces Analyzed By Infrared Spectroscopy".
T. Hattori, Thin Solid Films, 206(1991) "Silicon Oxide Films And The Oxide-Silicon Interface".
S. Wolf & R. N. Tauber, "Silicon Processing For the VLSI ERA" vol. I, 1986, pp. 19-21, 150-1,175,198,251.
S. M. Hu, J. Appl. Phys., 51(11) (1980)5945, "IR Absorption Spectra of SiO.sub.2 Precipitates . . . ".
H. Ogawa et al., Appl. Surf. Sci., 56-58(1992)836 "Si-H Bonds in Silicon Oxide Near The SiO.sub.2 /Si Interface".
E. Glaser et al., Phys. Rev. B, 37,18(1988)10769 "Far Infrared . . . Studies of Oxide Charge Induced . . . ".
Y. Nagasawa et al., J. Appl. Phys., 68,4 (1990)1429 "The Study of Thermal Oxide Films . . . By FT-IR-ATR".
F. Shimura et al., Appl. Phys. Lett., 38,11(1981)867 ". . . Interstitial Oxygen in Annealed CZ Si . . . ".
K. Ishikawa, et al., Control of Semic. Interfaces Symp. Proc., "FT-IR-RAS Analysis of the Structure of the SiO.sub.2 /Si Interface" Jun. 1994.
T. Suzuki, et al., Jpn. J. Appl. Phys., 25(4)(1986)544, "Depth Profiling of the Si-SiO.sub.2 Interface Structures" Apr. 1986.
R. A. B. Devine, et al., MRS Symp. Proc. '93, vol. 318 p. 623, "Near Interface . . . Si/SiO.sub.2 /Si Structures" Nov. 1993.
P. Grosse et al., Appl. Phys. A, 39(1986)257, "IR Spectroscopy of Oxide Layers . . . " Apr. 1986.
Y. Matsui, et al., Jpn. J. Appl. Phys., 31(2a)(1992)369, ". . . IR Characterization of Ultrathin SiO.sub.2 Film by Grazing Internal Reflection . . . " Feb. 1992.
R. Brendel, Appl. Phys. A, 50 (1990) 587, "Quantitative IR Study of Ultrathin MIS Structures by Grazing Internal Reflection" May 1990.

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