Silicon oxide based gate dielectric layer

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Reexamination Certificate

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C428S336000, C428S469000, C257S288000, C257S310000, C257S325000

Reexamination Certificate

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06844076

ABSTRACT:
A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide SiOX≦2, having a dielectric constant greater than about 3.9 and less than or equal to about 12.

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