Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-01-02
2007-01-02
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S021000, C257S079000, C257S081000, C257S082000, C257S083000, C257S084000, C257S085000, C257S086000, C257S087000, C257S101000, C257S102000, C257S103000
Reexamination Certificate
active
10784967
ABSTRACT:
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite type from that of the substrate. The doped region provides photoelectrical conversion. The silicon optoelectronic device includes a light-emitting device section and a light-receiving device section. These sections use the doped region in common and are formed in the first surface of the substrate. The silicon optoelectronic device has an internal amplifying circuit, can selectively perform emission and detection of light, and can control the duration of emission and detection of light.
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Choi Byoung-lyong
Kim Jun-young
Lee Eun-kyung
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Soward Ida M.
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