Silicon-on-silicon wafer bonding process using a thin film blist

Details Silicon-on-silicon wafer bonding process using a thin film blist Silicon-on-silicon wafer bonding process using a thin film blist

1998-02-19

2000-12-12

Utech, Benjamin L.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438706, 438977, H01L 2130, H01L 21302

Patent

active

061598240

ABSTRACT:
A method for fabricating silicon-on-silicon substrates. A donor wafer (40) is attached to a target wafer (46) using a low-temperature bonding process. The low-temperature bonding process maintains the integrity of a layer of microbubbles (41). Subsequent processing separates a thin film (45) of material from the donor wafer. A high-temperature annealing process finishes the bonding process of the thin film to the target wafer to produce a hybrid wafer suitable for fabricating integrated circuit devices or other devices.

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