Silicon-on-silicon hybrid wafer assembly

Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...

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H01L 2906

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06048411&

ABSTRACT:
A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.

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