Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...
Patent
1998-02-19
2000-04-11
Bowers, Charles
Metal treatment
Barrier layer stock material, p-n type
Having at least three contiguous layers of semiconductive...
H01L 2906
Patent
active
06048411&
ABSTRACT:
A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.
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Cheung Nathan W.
Henley Francois J.
Bowers Charles
Christianson Keith
Silicon Genesis Corporation
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