Silicon-on-insulator structure for electrostatic discharge prote

Details Silicon-on-insulator structure for electrostatic discharge prote Silicon-on-insulator structure for electrostatic discharge prote

1997-03-21

2000-09-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257360, 257104, H01L 2362, H01L 2701, H01L 2712, H01L 29861

Patent

active

061216615

ABSTRACT:
Doped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSFET devices to provide paths for dissipating positive and negative ESD stresses. In addition, the polysilicon plugs provide a thermal dissipation pathway for directing heat away from the circuitry, and provide a diode for the structure.

REFERENCES:
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5442211 (1995-08-01), Kita

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