Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S366000
Reexamination Certificate
active
06873013
ABSTRACT:
The invention relates to a transistor that includes a semiconductive layer on an insulator layer. Below the insulator layer is a substrate and a contact is disposed in the insulator layer that originates at the substrate and terminates in the insulator layer. The contact is aligned below the transistor junction. The invention also relates to a process flow that is used to fabricate the transistor. The process flow includes forming the contact by either a spacer etch or a directional, angular etch.
REFERENCES:
patent: 5028559 (1991-07-01), Zdebel et al.
patent: 5075241 (1991-12-01), Spratt et al.
patent: 5563088 (1996-10-01), Tseng
patent: 5654573 (1997-08-01), Oashi et al.
patent: 5923986 (1999-07-01), Shen
patent: 5955765 (1999-09-01), Yamazaki et al.
patent: 6013950 (2000-01-01), Nasby
patent: 6121077 (2000-09-01), Hu et al.
patent: 6180985 (2001-01-01), Yeo
patent: 6221764 (2001-04-01), Inoue
patent: 6333235 (2001-12-01), Lee et al.
patent: 6399496 (2002-06-01), Edelstein et al.
patent: 6426543 (2002-07-01), Maeda et al.
patent: 6617651 (2003-09-01), Ohsawa
patent: 6642133 (2003-11-01), Roberds et al.
Barlage Doulgas W.
Roberds Brian
LandOfFree
Silicon-on-insulator structure and method of reducing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon-on-insulator structure and method of reducing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator structure and method of reducing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3408551