Silicon-on-insulator (SOI) transistor

Details Silicon-on-insulator (SOI) transistor Silicon-on-insulator (SOI) transistor

1995-02-17

1997-11-11

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257192, 257347, 257616, H01L 2712

Patent

active

056867352

ABSTRACT:
An SOI transistor whose source region and/or drain region have a heterostructure made up of at least two different semiconductor materials, to thereby prevent a bipolar-induced breakdown.

REFERENCES:
patent: 5166084 (1992-11-01), Pfiester
patent: 5420055 (1995-05-01), Vu et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5475244 (1995-12-01), Koizumi et al.
Nayak et al., "High-Mobility GeSi PMOS on SIMOX," IEEE Electron Device Letters, vol. 14, No. 11, Nov. 1993, pp. 520-522.

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