Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-09-27
2005-09-27
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S311000, C438S168000
Reexamination Certificate
active
06949420
ABSTRACT:
A method is provided of forming a silicon-on-insulator (SOI) substrate having at least two exposed surface crystal orientations. The method begins by providing an SOI substrate having a first silicon layer with a surface having a first crystal orientation located on a first buried oxide layer. The buried oxide layer is located on a silicon substrate having a surface with a second crystal orientation. The first silicon layer and the first buried oxide layer are selectively removed from a first portion of the SOI substrate to expose a first surface portion of the silicon substrate. A second silicon layer is epitaxially grown over the first surface portion of the silicon substrate. The second silicon layer has a surface with a second crystal orientation. A second buried oxide layer is formed in the second silicon layer. Subsequent to the fabrication of the SOI substrate, N and P type MOSFETS may be formed on the surfaces with different crystal orientations.
REFERENCES:
patent: 5841170 (1998-11-01), Adan et al.
patent: 6391692 (2002-05-01), Nakamura
patent: 6476445 (2002-11-01), Brown et al.
patent: 6503813 (2003-01-01), Koburger, III
patent: 6531754 (2003-03-01), Nagano et al.
patent: 6559035 (2003-05-01), Villa et al.
patent: 6566712 (2003-05-01), Hayashi et al.
patent: 6593173 (2003-07-01), Anc et al.
patent: 6627505 (2003-09-01), Adan
patent: 6649455 (2003-11-01), Murakami
patent: 6724046 (2004-04-01), Oyamatsu
patent: 6835981 (2004-12-01), Yamada et al.
patent: 2004/0075141 (2004-04-01), Maeda et al.
Momose, H.S. et al., “1.5-nm Gate Oxide CMOS on(110)Surface-Oriented Si Substrate,”IEEE Transactions On Electron Devices, vol. 50, No. 4, Apr. 2003, pp. 1001-1008.
Cao Phat X.
Doan Theresa T
Mayer, Esq. Stuart H.
Sony Corporation
Sony Electronics Inc.
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