Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C438S423000, C438S514000, C438S517000
Reexamination Certificate
active
07064387
ABSTRACT:
A silicon-on-insulator (SOI) substrate includes a silicon substrate including an active region defined by a field region that surrounds the active region for device isolation. The field region includes a first oxygen-ion-injected isolation region and a second oxygen-ion-injected isolation region. The first oxygen-ion-injected isolation region has a first thickness and is disposed under the active region, a center of the first oxygen-ion-injected isolation region being at a first depth from a top surface of the silicon substrate. The second oxygen-ion-injected isolation region has a second thickness that is greater than the first thickness, the second oxygen-ion-injected isolation region disposed at sides of the active region and formed from a ton surface of the silicon substrate, a center of the second oxygen-ion-injected region disposed at a second depth from the top surface of the silicon substrate.
REFERENCES:
patent: 5240512 (1993-08-01), Pollack
patent: 5410172 (1995-04-01), Koizumi et al.
patent: 5886385 (1999-03-01), Arisumi et al.
patent: 5918151 (1999-06-01), Tachimori et al.
patent: 5930643 (1999-07-01), Sadana et al.
patent: 6043166 (2000-03-01), Roitman et al.
patent: 6046476 (2000-04-01), Morishita et al.
patent: 6194289 (2001-02-01), Lee
patent: 6225674 (2001-05-01), Lim et al.
patent: 6232201 (2001-05-01), Yoshida et al.
patent: 6278156 (2001-08-01), Kobayashi
patent: 6310378 (2001-10-01), Letavic et al.
patent: 6314021 (2001-11-01), Maeda et al.
patent: 6333532 (2001-12-01), Davari et al.
patent: 6340829 (2002-01-01), Hirano et al.
patent: 6350703 (2002-02-01), Sakaguchi et al.
patent: 6432798 (2002-08-01), Liu et al.
patent: 6455894 (2002-09-01), Matsumoto et al.
patent: 6538286 (2003-03-01), Back
patent: 6621123 (2003-09-01), Nakabayashi et al.
patent: 04-067649 (1992-03-01), None
patent: 07201982 (1995-08-01), None
patent: 08-167646 (1996-06-01), None
English language abstract of Japanese Patent No. 04-067649.
English language abstract of Japanese Patent No. 08-167646.
Marger & Johnson & McCollom, P.C.
Soward Ida M.
LandOfFree
Silicon-on-insulator (SOI) substrate and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon-on-insulator (SOI) substrate and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator (SOI) substrate and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3705085