Silicon on insulator semiconductor composition containing thin s

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

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148 334, 148DIG135, 437974, H01L 310264

Patent

active

051319632

ABSTRACT:
A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.

REFERENCES:
patent: 4447497 (1984-05-01), Manasevit
patent: 4768011 (1988-08-01), Hattori et al.
patent: 4863529 (1989-09-01), Imai et al.
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4939043 (1990-09-01), Biricik et al.
patent: 4981818 (1991-01-01), Anthony et al.

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