Silicon-on-insulator MOS structure

Details Silicon-on-insulator MOS structure Silicon-on-insulator MOS structure

1998-05-11

2000-08-29

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257373, 257382, 257396, H01L 2701

Patent

active

061112933

ABSTRACT:
A silicon-on-insulator metallic oxide semiconductor structure having a double implanted source region. By etching a trench contact window in the double implanted source region and then depositing a metal into the trench to form a metal plug, contact between the source terminal and the substrate is established. Consequently, floating body effect of a silicon-on-insulator device is prevented without having to provide additional surface area to accommodate the contact window.

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patent: 5489792 (1996-02-01), Hu et al.
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5763904 (1998-06-01), Nakajima et al.
patent: 5818085 (1998-10-01), Hsu et al.
patent: 5869874 (1999-02-01), Manning
patent: 5929490 (1999-07-01), Onishi
patent: 5945712 (1999-08-01), Kim

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