Silicon-on-insulator insulated gate bipolar transistor

Details Silicon-on-insulator insulated gate bipolar transistor Silicon-on-insulator insulated gate bipolar transistor

1999-09-13

2000-11-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257350, H01L 2976, H01L 2701

Patent

active

06150694&

ABSTRACT:
A silicon-on-insulator insulated gate bipolar transistor (SOI-IGBT) has a channel zone of a first conductivity type, at least one cell zone of a second conductivity type, and at least one intermediate zone of the first conductivity type which delimits the SOI-IGBT. The channel zone, the cell zone, and the intermediate zone are disposed in an insulator layer, which is provided on a semiconductor body of the first conductivity type. The channel zone, the cell zone, and the intermediate zone are connected to the semiconductor body via openings provided in the insulator layer. A semiconductor configuration having a CMOS circuit integrated with an SOI-IGBT is also provided.

REFERENCES:
patent: 5396087 (1995-03-01), Baliga
patent: 5416354 (1995-05-01), Blackstone
patent: 5514885 (1996-05-01), Myrick
patent: 5608252 (1997-03-01), Nakato
Japanese Patent Abstract No. 02135781 (Teruyoshi), dated May 24, 1990.

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