Silicon on insulator field effect transistors

Details Silicon on insulator field effect transistors Silicon on insulator field effect transistors

1994-11-21

1996-07-30

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, H01L 2701, H01L 2712

Patent

active

055414320

ABSTRACT:
In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region, and a drain region may also be arranged on the same plane, and the latter MOS device is arranged adjacent to the gate electrode. This type of device may be constructed as a CMOS type device. In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel, and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

REFERENCES:
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4996574 (1991-02-01), Shirasaki
patent: 5095347 (1992-03-01), Kirsch
patent: 5315143 (1994-05-01), Tsuji

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