Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-21
1999-08-17
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257575, 257576, 257556, 257555, 257560, 257561, 257562, 257564, H01L 2904
Patent
active
059397594
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND
The invention relates to a semiconductor device comprising a silicon substrate, an insulating layer on said silicon substrate, a silicon layer on said insulating layer, said silicon layer being weakly doped with impurities of a first conduction type, a base region extending into said silicon layer from the free surface thereof, said base region being doped with impurities of a second conduction type, an emitter region, extending into said base region from the free surface thereof, said emitter region being heavily doped with impurities of said first conduction type, and at least one collector region extending into said silicon layer from the free surface thereof at a lateral distance from said base region, said collector region being doped with impurities of said first conduction type.
A bipolar silicon-on-insulator transistor having the above structure, is known from Andrej Litwin and Torkel Arnborg: "Extremely compact CMOS compatible bipolar silicon-on-insulator transistor for mixed high voltage and high density integrated circuit applications", Late News Paper at ESSDERC'93, September, 1993, and Andrej Litwin and Torkel Arnborg: "Compact Very High Voltage Compatible Bipolar Silicon-On-Insulator Transistor", ISPSD'93, Davos, June, 1994.
The emitter-base structure of such a transistor, is vertical but the high collector voltage is supported by a lateral fully depleted collector region. The transistor can be designed to handle almost any desired voltage up to several hundred volts.
One important feature of a high speed transistor is the unity gain frequency. This frequency is the inverse sum of the relevant transit times in the transistor. In the known silicon-on-insulator transistor the most important transit times are those required for vertical transport across the base and for lateral transport along the silicon-oxide interface. The physical transport mechanism is in most cases diffusion and not drift implying that the transit times are proportional to the inverse square of the transport distance. Since the lateral distance at the interface is larger than the vertical distance in the base the associated transit time is much larger. The speed of the transistor is thus mainly limited by the transit time at the interface.
SUMMARY
The object of the invention is to eliminate the limitations on speed imposed by the lateral diffusion along the silicon-oxide interface and bring about a high speed transistor without affecting its high voltage capability.
This is accomplished by the invention in a semiconductor device of the above type by a floating collector region being provided in said silicon layer between said insulating layer and said base region at a distance from said base region, the lateral extension of said floating collector region being larger than that of the emitter region and smaller than that of the base region, said floating collector region being more doped with impurities of said first conduction type than said silicon layer.
BRIEF DESCRIPTION OF DRAWING
The invention will be described more in detail with reference to the appended drawing on which the single FIGURE shows an embodiment of a bipolar silicon-on-insulator transistor according to the invention.
DETAILED DESCRIPTION
The single FIGURE on the drawing shows an embodiment of a bipolar silicon-on-insulator (SOI) transistor according to the invention. The transistor comprises a silicon substrate 1 on which an insulating oxide layer 2 is provided.
A silicon layer 3 which is weakly doped with impurities of conduction type N, is provided on the insulating oxide layer 2.
A base region 4 which is doped with impurities of conduction type P, extends into the silicon layer 3 from the free surface thereof.
An emitter region 5 which is heavily doped with impurities of conduction type N, extends into the base region 4 from the free surface thereof.
In the embodiment shown, the transistor comprises one collector contact region 6 which is doped with impurities of conduction type N. The collector region extends into the silicon la
REFERENCES:
patent: 3995307 (1976-11-01), Alcorn et al.
patent: 4819055 (1989-04-01), Nakazato et al.
patent: 4835596 (1989-05-01), Werner
patent: 4861731 (1989-08-01), Bhagat
patent: 5327006 (1994-07-01), Beasom
patent: 5341022 (1994-08-01), Kuroi et al.
patent: 5419786 (1995-05-01), Kokawa et al.
patent: 5621239 (1997-04-01), Horie et al.
patent: 5659190 (1997-08-01), Litwin
A. Litwin et al., "Extremely Compact CMOS Compatible Bipolar Silicon-On-Insulator Transistor for Mixed High Voltage and High Density Integrated Circuit Applications" Late News Sessions, ESSDERC'93 (Sep. 1993).
A. Litwin et al., "Compact Very High Voltage CMOS Compatible Bipolar Silicon-On-Insulator Transistor" Proc. of the 6th Int'l Symposium on Power Semiconductor Devices & IC's, pp. 113-115 (May-Jun. 1994).
Abraham Fetsum
Telefonaktiebolaget LM Ericsson
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