Silicon on insulator device comprising improved substrate doping

Details Silicon on insulator device comprising improved substrate doping Silicon on insulator device comprising improved substrate doping

1992-12-04

1994-10-25

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257349, 257350, H01L 2701, H01L 2712, H01L 31392

Patent

active

053592190

ABSTRACT:
A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried p-layer (16) and a buried n-well region (26) are formed in order to position p-n junctions beneath n-channel and p-channel devices respectively formed in the outer silicon layer (14) outwardly from the p-layer (16) and (n)-well (26).

REFERENCES:
patent: 4907053 (1990-03-01), Ohmi
patent: 5079607 (1992-01-01), Sakurai
patent: 5103277 (1992-04-01), Caviglia et al.

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