Silicon-on-insulator CMOS device and a liquid crystal display wi

Details Silicon-on-insulator CMOS device and a liquid crystal display wi Silicon-on-insulator CMOS device and a liquid crystal display wi

1994-08-04

1995-07-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257351, 257352, 359 59, H01L 2701, H01L 2713

Patent

active

054344417

ABSTRACT:
A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following inequality:

REFERENCES:
patent: 4907053 (1990-03-01), Ohmi
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5225356 (1993-07-01), Omura et al.
patent: 5233207 (1993-08-01), Anzai
patent: 5241211 (1993-08-01), Tashiro

Affiliated with

Also associated with

Rating

Silicon-on-insulator CMOS device and a liquid crystal display wi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-on-insulator CMOS device and a liquid crystal display wi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator CMOS device and a liquid crystal display wi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2419910